Correction: Plasma enhanced atomic layer deposition of Ga2O3 thin films
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چکیده
منابع مشابه
Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air ga...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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3 Preface 4 List of publications 5 List of symbols and abbreviations 6
متن کاملAtomic Layer Deposition of Tin Monosulfide Thin Films
Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses Cu(In,Ga)(S,Se)2 and CdTe, which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (SnS). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of bis(N,N’...
متن کاملAtomic/molecular layer deposition of hybrid inorganic-organic thin films
Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Pia Sundberg Name of the doctoral dissertation Atomic/molecular layer deposition of hybrid inorganic-organic thin films Publisher School of Chemical Technology Unit Department of Chemistry Series Aalto University publication series DOCTORAL DISSERTATIONS 201/2014 Field of research Inorganic Chemistry Manuscript submitted 11 Se...
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry A
سال: 2015
ISSN: 2050-7488,2050-7496
DOI: 10.1039/c4ta90219j